dc.contributor.author |
Siari, Khadidja |
|
dc.contributor.author |
Rebiai, Saïda |
|
dc.date.accessioned |
2022-05-24T09:52:41Z |
|
dc.date.available |
2022-05-24T09:52:41Z |
|
dc.date.issued |
2021-07-25 |
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dc.identifier.uri |
http://depot.umc.edu.dz/handle/123456789/5794 |
|
dc.description.abstract |
The objective of the work presented in this thesis is a contribution to the development of electrical and hydrodynamic models allowing the modeling of the physical phenomena that occur in inductively coupled radiofrequency plasma discharges. It represents the development of a self-coherent fluid model in a GEC reference cell reactor which allows the determination of the distribution of different charged particles, electron temperature, electric field, and plasma potential, as well as to study the effect of discharge parameters, such as the composition of the gas, the pressure in the reactor as well as the appliedpower, in a reactive cold plasmas formed in discharges excited by an electric field, on the plasma properties. The model is developed using the COMSOL multiphysics software. The software is based on solving the first three moments of the Boltzmann equation (continuity equations, momentum transfer equation, and the energy of electrons equation) coupled to the Poisson and Maxwell’s equations, by the finite element method. The model is applied, at first, to study the properties of plasma created in a mixture of oxygen and argon. Then, it is used to analyze the effect of discharge conditions on the growth rate of silicon films deposited by ICP-CVD, from plasma composed of argon, hydrogen and silane. |
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dc.language.iso |
fr |
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dc.publisher |
Université Frères Mentouri - Constantine 1 |
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dc.subject |
Électronique: Micro et Nanotechnologies |
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dc.subject |
Plasma à couplage inductif (ICP) |
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dc.subject |
Dépôt chimique en phase vapeur assisté par plasma |
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dc.subject |
COMSOL Multiphysics |
|
dc.subject |
Cellule de référence GEC |
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dc.subject |
Films de silicium |
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dc.subject |
plasma haute densité |
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dc.subject |
basse pression |
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dc.subject |
taux de croissance |
|
dc.subject |
Inductively coupled plasma (ICP) |
|
dc.subject |
Plasma-enhanced chemical vapor deposition |
|
dc.subject |
GEC reference cell |
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dc.subject |
Silicon films |
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dc.subject |
High-density plasma |
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dc.subject |
Low Pressure |
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dc.subject |
Deposition rate |
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dc.subject |
بلازما مقترنة حثيا (ICP) |
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dc.subject |
ترسيب بخار كميائي بمساعدة البلازما |
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dc.subject |
خلية مرجعية GEC |
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dc.subject |
طبقة سيليكون |
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dc.subject |
بلازما عالية الكثافة |
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dc.subject |
ضغط منخفض |
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dc.subject |
نسبة النمو |
|
dc.subject |
COSMSOL |
|
dc.title |
Etude et simulation d’une décharge plasma à couplage inductif. |
|
dc.type |
Thesis |
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