Contribution à l’étude de l’implantation des ions de carbone dans le silicium

Abstract

In this work, we studied the ion implantation of carbon in silicon by simulation and experimentally. Several phenomena related to carbon implantation in Si (100) were simulated using two codes: Trim and Crystal Trim. Experimentally, the samples were prepared by implanting carbon into silicon wafers with an implantation energy of 70 keV C+ to fluences of 11016 C+ cm-2 and 11017 C+ cm-2 (for a tilt angle of 7°).The implanted wafers were annealed at different temperatures (875 ° C, 1000 °C and 1250 °C). The characterization of the samples was performed using three techniques: secondary ion masse spectroscopy (SIMS), Raman spectroscopy and Vickers hardness test. In the simulation part, we determined several parameters related to the distribution profiles of the implanted ions. We also studied the effect of implantation parameters (such as energy, fluence, tilt angle and orientation of the substrate) on the distribution profiles. SIMS measurements provided us the experimental distribution profiles of implanted ions. The effect of post-annealing treatment was also studied by this technique. The analysis by Raman spectroscopy was very useful to study the damage and recrystallization of implanted targets. We were able to determine the rate of damage of the implanted areas. We also studied the effect of thermal annealing on the restoration of defects. Finally, the Vickers micro-hardness test allowed us to study the effects of implantation and thermal annealing on the hardness of the implanted substrates. The hardness decreased considerably after ion implantation (due to amorphization of the implanted zones) and increased significantly after thermal annealing